AT45DB321D 32Mb, 2.5V or 2.7V DataFlash DATASHEET (NOT RECOMMENDED FOR NEW DESIGNS. USE AT45DB321E.) Features Single 2.5V - 3.6V or 2.7V - 3.6V supply RapidSTM serial interface: 66MHz maximum clock frequency SPI compatible modes 0 and 3 User configurable page size 512 bytes per page 528 bytes per page Page size can be factory preconfigured for 512 bytes Page program operation Intelligent programming operation 8,192 pages (512/528 bytes/page) main memory Flexible erase options Page erase (512 bytes) Block erase (4KB) Sector erase (64KB) Chip erase (32Mb) Two SRAM data buffers (512/528 bytes) Allows receiving data while reprogramming the flash array Continuous read capability through entire array Ideal for code shadowing applications Low power dissipation 7mA active read current ,typical 25A standby current, typical 15A deep power down, typical Hardware and software data protection features Individual sector Sector lockdown for secure code and data storage Individual sector Security: 128-byte security register 64-byte user programmable space Unique 64-byte device identifier JEDEC standard manufacturer and device ID read 100,000 program/erase cycles per page, minimum Data retention: 20 years Industrial temperature range Green (Pb/halide-free/RoHS compliant) packaging options 3597T-DFLASH-11/2013 1. Description The AT45DB321D is a 2.5V or 2.7V, serial interface, sequential access flash memory ideally suited for a wide variety of digital voice-, image-, program code-, and data-storage applications. The AT45DB321D supports the RapidS serial interface for applications requiring very high speed operations. The RapidS serial interface is SPI compatible for frequencies up to 66MHz. The 34,603,008-bits of memory are organized as 8,192 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB321D also contains two SRAM buffers of 512/528 bytes each. These buffers allow the receiving of data while a page in the main memory is being reprogrammed, as well as the writing of a continuous data stream. EEPROM (electrically erasable and programmable read-only memory) emulation (bit or byte alterability) is easily handled with a self-contained, three-step read-modify-write operation. Unlike conventional flash memories, which are accessed randomly with multiple address lines and a parallel interface, DataFlash(R) devices use a RapidS serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial applications where high density, low pin count, low voltage and low power are essential. To allow for simple, in-system reprogrammability, the AT45DB321D does not require high input voltages for programming. The device operates from a single power supply, 2.7V to 3.6V, for both the program and read operations. The AT45DB321D is enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the serial input (SI), serial output (SO), and serial clock (SCK) lines. All programming and erase cycles are self timed. Figure 1-1. Pin configurations and pinouts. MLF(1) (VDFN) Top View SI SCK RESET CS Note: 1. SOIC Top View SO GND 6 VCC 5 WP 1 8 2 7 3 4 SI SCK RESET CS 8 7 6 5 SO GND VCC WP The metal pad on the bottom of the MLF package is floating. This pad can be a "No Connect" or connected to GND. BGA Package Ball-out Top View 1 TSOP: Type 1 Top View 2 3 4 5 NC NC NC NC NC SCK GND VCC NC NC CS RDY/BSY WP NC NC SO SI RESET NC NC NC NC NC NC A B 1 2 3 4 C D E RDY/BUSY RESET WP NC NC VCC GND NC NC NC CS SCK SI SO Note: 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 NC NC NC NC NC NC NC NC NC NC NC NC NC NC TSOP package is not recommended for new designs. Future die shrinks will support 8-pin packages only. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 2 Table 1-1. Symbol CS Pin Configurations Name and Function Chip Select: Asserting the CS pin selects the device. When the CS pin is deasserted, the device will be deselected and normally be placed in the standby mode (not deep powerdown mode), and the output pin (SO) will be in a high-impedance state. When the device is deselected, data will not be accepted on the input pin (SI). Asserted State Type Low Input A high-to-low transition on the CS pin is required to start an operation, and a low-to-high transition is required to end an operation. When ending an internally self-timed operation such as a program or erase cycle, the device will not enter the standby mode until the completion of the operation. SCK Serial Clock: This pin is used to provide a clock to the device, and is used to control the flow of data to and from the device. Command, address, and input data present on the SI pin are always latched on the rising edge of SCK, while output data on the SO pin are always clocked out on the falling edge of SCK. - Input SI Serial Input: The SI pin is used to shift data into the device. The SI pin is used for all data input, including command and address sequences. Data on the SI pin are always latched on the rising edge of SCK. - Input SO Serial Output: The SO pin is used to shift data out from the device. Data on the SO pin are always clocked out on the falling edge of SCK. - Output WP Write Protect: When the WP pin is asserted, all sectors specified for protection by the sector protection register will be protected against program and erase operations, regardless of whether the enable sector protection command has been issued or not. The WP pin functions independently of the software controlled protection method. After the WP pin goes low, the content of the sector protection register cannot be modified. Low Input Low Input - Output - Power - Ground If a program or erase command is issued to the device while the WP pin is asserted, the device will simply ignore the command and perform no operation. The device will return to the idle state once the CS pin has been deasserted. The enable sector protection command and sector lockdown command, however, will be recognized by the device when the WP pin is asserted. The WP pin is internally pulled high, and may be left floating if hardware controlled protection will not be used. However, it is recommended that the WP pin also be externally connected to VCC whenever possible. RESET Reset: A low state on the reset pin (RESET) will terminate the operation in progress and reset the internal state machine to an idle state. The device will remain in the reset condition as long as a low level is present on the RESET pin. Normal operation can resume once the RESET pin is brought back to a high level. The device incorporates an internal power-on reset circuit, and so there are no restrictions on the RESET pin during power-on sequences. If this pin and feature are not utilized, it is recommended that the RESET pin be driven high externally. RDY/BUSY Ready/Busy: This open drain output pin will be driven low when the device is busy in an internally self-timed operation. This pin, which is normally in a high state (through an external pull-up resistor), will be pulled low during programming/erase operations, compare operations, and page-to-buffer transfers. The busy status indicates that the flash memory array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed. VCC Device Power Supply: The VCC pin is used to supply the source voltage to the device. Operations at invalid VCC voltages may produce spurious results and should not be attempted. GND Ground: The ground reference for the power supply. GND should be connected to the system ground. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 3 Figure 1-2. Block Diagram Flash Memory Array WP Page (512-/528-bytes) Buffer 1 (512-/528-bytes) SCK CS RESET VCC GND RDY/BUSY I/O Interface SI SO Memory Array To provide optimal flexibility, the AT45DB321D memory array is divided into three levels of granularity comprising sectors, blocks, and pages. The "Memory Architecture Diagram" illustrates the breakdown of each level, and details the number of pages per sector and block. All program operations to the DataFlash device occur on a page-by-page basis. The erase operations can be performed at the chip, sector, block, or page level. Figure 2-1. Memory Architecture Diagram Sector Architecture Sector 0a Block 0 8 Pages Page 0 Block 1 Sector 0b Block 2 Sector 0b = 120 pages 61,440/63,360 bytes Page Architecture Page 1 Block 0 Sector 0a = 8 pages 4,096/4,224 bytes Block Architecture Page 6 Page 7 Block 14 Sector 1 = 128 pages 65,536/67,584 bytes Block 17 Page 9 Block 1 Block 16 Sector 2 = 128 pages 65,536/67,584 bytes Page 8 Block 15 Sector 1 2. Buffer 2 (512-/528-bytes) Page 14 Page 15 Block 30 Page 16 Block 31 Page 17 Block 32 Page 18 Sector 62 = 128 pages 65,536/67,584 bytes Block 33 Sector 63 = 128 pages 65,536/67,584 bytes Block 1,022 Block 1,023 Block = 4,096/4,224 bytes Page 8,190 Page 8,191 Page = 512/528 bytes AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 4 3. Device Operation The device operation is controlled by instructions from the host processor. The list of instructions and their associated opcodes are contained in Table 13-1 on page 24 through Table 13-7 on page 27. A valid instruction starts with the falling edge of CS, followed by the appropriate 8-bit opcode and the desired buffer or main memory address location. While the CS pin is low, toggling the SCK pin controls the loading of the opcode and the desired buffer or main memory address location through the SI (serial input) pin. All instructions, addresses, and data are transferred with the most-significant bit (msb) first. Buffer addressing for the standard DataFlash page size (528 bytes) is referenced in the datasheet using the terminology BFA9 - BFA0 to denote the ten address bits required to designate a byte address within a buffer. Main memory addressing is referenced using the terminology PA12 - PA0 and BA9 - BA0, where PA12 - PA0 denotes the 13 address bits required to designate a page address and BA9 - BA0 denotes the ten address bits required to designate a byte address within the page. For a "power of two" binary page size (512 bytes), the buffer addressing is referenced in the datasheet using the conventional terminology BFA8 - BFA0 to denote the nine address bits required to designate a byte address within a buffer. Main memory addressing is referenced using the terminology A21 - A0, where A21 - A9 denotes the 13 address bits required to designate a page address and A8 - A0 denotes the nine address bits required to designate a byte address within a page. 4. Read Commands By specifying the appropriate opcode, data can be read from the main memory or from either one of the two SRAM data buffers. The DataFlash device supports RapidS protocols for Mode 0 and Mode 3. Please refer to Section 22., Detailed Bit-level Read Waveform - RapidS Serial Interface Mode 0/Mode 3 diagrams in this datasheet for details on the clock cycle sequences for each mode. 4.1 Continuous Array Read (Legacy Command: E8H): Up to 66MHz By supplying an initial starting address for the main memory array, the continuous array read command can be utilized to sequentially read a continuous stream of data from the device by simply providing a clock signal; no additional addressing information or control signals need to be provided. The DataFlash device incorporates an internal address counter that will automatically increment on every clock cycle, allowing one continuous read operation without the need of additional address sequences. To perform a continuous read from the standard DataFlash page size (528 bytes), an opcode of E8H must be clocked into the device, followed by three address bytes (which comprise the 24-bit page and byte address sequence) and four "don't care" bytes. The first 13 bits (PA12 - PA0) of the 23-bit address sequence specify which page of the main memory array to read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify the starting byte address within the page. To perform a continuous read from the binary page size (512-bytes), the opcode (E8H) must be clocked into the device followed by three address bytes and four don't care bytes. The first 13 bits (A21 - A9) of the 22-bit sequence specify which page of the main memory array to read, and the last 9 bits (A8 - A0) of the 22-bit address sequence specify the starting byte address within the page. The don't care bytes that follow the address bytes are needed to initialize the read operation. Following the don't care bytes, additional clock pulses on the SCK pin will result in data being output on the SO (serial output) pin. The CS pin must remain low during the loading of the opcode, the address bytes, the don't care bytes, and the reading of data. When the end of a page in main memory is reached during a continuous array read, the device will continue reading at the beginning of the next page, with no delays incurred during the page boundary crossover (the crossover from the end of one page to the beginning of the next page). When the last bit in the main memory array has been read, the device will continue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred when wrapping around from the end of the array to the beginning of the array. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum SCK frequency allowable for the continuous array read is defined by the fCAR1 specification. The continuous array read bypasses both data buffers and leaves the contents of the buffers unchanged. 4.2 Continuous Array Read (High Frequency Mode: 0BH): Up to 66MHz This command can be used with the serial interface to read the main memory array sequentially in high-speed mode for any clock frequency up to the maximum specified by fCAR1. To perform a continuous read array with the page size set to 528 bytes, CS must first be asserted, and then a 0BH opcode must be clocked into the device, followed by three address bytes and a dummy byte. The first 13 bits (PA12 - PA0) of the 23-bit address sequence specify which page of the main memory array to read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify the starting byte address within the page. To perform a continuous read with the page size set to 512 bytes, the 0BH opcode must be clocked into the device, followed by three address bytes (A21 - A0) and a dummy byte. Following the dummy byte, additional clock pulses on the SCK pin will result in data being output on the SO (serial output) pin. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 5 The CS pin must remain low during the loading of the opcode, the address bytes, and the reading of data. When the end of a page in the main memory is reached during a continuous array read, the device will continue reading at the beginning of the next page, with no delays incurred during the page boundary crossover (the crossover from the end of one page to the beginning of the next page). When the last bit in the main memory array has been read, the device will continue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred when wrapping around from the end of the array to the beginning of the array. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum SCK frequency allowable for the continuous array read is defined by the fCAR1 specification. The continuous array read bypasses both data buffers and leaves the contents of the buffers unchanged. 4.3 Continuous Array Read (Low Frequency Mode: 03H): Up to 33MHz This command can be used with the serial interface to read the main memory array sequentially without a dummy byte up to the maximum frequency specified by fCAR2. To perform a continuous read array with the page size set to 528 bytes, the CS must first be asserted, and then a 03H opcode must be clocked into the device, followed by three address bytes (which comprise the 24-bit page and byte address sequence). The first 13 bits (PA12 - PA0) of the 23-bit address sequence specify which page of the main memory array to read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify the starting byte address within the page. To perform a continuous read with the page size set to 512 bytes, the 03H opcode must be clocked into the device, followed by three address bytes (A21 - A0). Following the address bytes, additional clock pulses on the SCK pin will result in data being output on the SO (serial output) pin. The CS pin must remain low during the loading of the opcode, the address bytes, and the reading of data. When the end of a page in the main memory is reached during a continuous array read, the device will continue reading at the beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the end of one page to the beginning of the next page). When the last bit in the main memory array has been read, the device will continue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred when wrapping around from the end of the array to the beginning of the array. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The continuous array read bypasses both data buffers and leaves the contents of the buffers unchanged. 4.4 Main Memory Page Read A main memory page read allows the user to read data directly from any one of the 8,192 pages in the main memory, bypassing both of the data buffers and leaving the contents of the buffers unchanged. To start a page read from the standard DataFlash page size (528 bytes), an opcode of D2H must be clocked into the device, followed by three address bytes (which comprise the 24-bit page and byte address sequence) and four don't care bytes. The first 13 bits (PA12 - PA0) of the 23-bit address sequence specify the page in main memory to be read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify the starting byte address within that page. To start a page read from the binary page size (512 bytes), the D2H opcode must be clocked into the device, followed by three address bytes and four don't care bytes. The first 13 bits (A21 - A9) of the 22-bit sequence specify which page of the main memory array to read, and the last 9 bits (A8 - A0) of the 22-bit address sequence specify the starting byte address within the page. The don't care bytes that follow the address bytes are sent to initialize the read operation. Following the don't care bytes, additional pulses on SCK result in data being output on the SO (serial output) pin. The CS pin must remain low during the loading of the opcode, the address bytes, the don't care bytes, and the reading of data. When the end of a page in main memory is reached, the device will continue reading back at the beginning of the same page. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum SCK frequency allowable for the main memory page read is defined by the fSCK specification. The main memory page read bypasses both data buffers and leaves the contents of the buffers unchanged. 4.5 Buffer Read The SRAM data buffers can be accessed independently of the main memory array, and utilizing the buffer read command allows data to be sequentially read directly from the buffers. Four opcodes, D4H or D1H for buffer 1 and D6H or D3H for buffer 2, can be used for the buffer read command. The use of each opcode depends on the maximum SCK frequency that will be used to read data from the buffer. The D4H and D6H opcodes can be used at any SCK frequency, up to the maximum specified by fCAR1. The D1H and D3H opcodes can be used for lower frequency read operations, up to the maximum specified by fCAR2. To perform a buffer read from the standard DataFlash buffer (528 bytes), the opcode must be clocked into the device, followed by three address bytes comprised of 14 don't care bits and 10 buffer address bits (BFA9 - BFA0). To perform a buffer read from the binary buffer (512 bytes), the opcode must be clocked into the device, followed by three address bytes comprised of 15 don't care bits and 9 buffer address bits (BFA8 - BFA0). Following the address bytes, one don't care byte must be clocked in to initialize the read operation. The CS pin must remain low during the loading of the opcode, the address bytes, the don't care byte, and the reading of data. When the end of a buffer is reached, the device will continue reading back at the beginning of the buffer. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 6 5. Program and Erase Commands 5.1 Buffer Write Data can be clocked in from the input pin (SI) into either buffer 1 or buffer 2. To load data into the standard DataFlash buffer (528 bytes), a 1-byte opcode, 84H for buffer 1 or 87H for buffer 2, must be clocked into the device, followed by three address bytes comprised of 14 don't care bits and 10 buffer address bits (BFA9 - BFA0). The 10 buffer address bits specify the first byte in the buffer to be written. To load data into the binary buffers (512 bytes each), a 1-byte 84H opcode for buffer 1 or 87H opcode for buffer 2 must be clocked into the device, followed by three address bytes comprised of 15 don't care bits and 9 buffer address bits (BFA8 - BFA0). The nine buffer address bits specify the first byte in the buffer to be written. After the last address byte has been clocked into the device, data can then be clocked in on subsequent clock cycles. If the end of the data buffer is reached, the device will wrap around back to the beginning of the buffer. Data will continue to be loaded into the buffer until a low-to-high transition is detected on the CS pin. 5.2 Buffer to Main Memory Page Program with Built-in Erase Data written into either buffer 1 or buffer 2 can be programmed into the main memory. A 1-byte opcode, 83H for buffer 1 or 86H for buffer 2, must be clocked into the device. For the standard DataFlash page size (528 bytes), the opcode must be followed by three address bytes consist of 1 don't care bit, 13 page address bits (PA12 - PA0) that specify the page in the main memory to be written, and 10 don't care bits. To perform a buffer to main memory page program with built-in erase for the binary page size (512 bytes), the 83H opcode for buffer 1 or 86H opcode for buffer 2 must be clocked into the device, followed by three address bytes consisting of 2 don't care bits, 13 page address bits (A21 - A9) that specify the page in the main memory to be written, and 9 don't care bits. When a low-to-high transition occurs on the CS pin, the part will first erase the selected page in main memory (the erased state is a logic one) and then program the data stored in the buffer into the specified page in main memory. The erase and the programming of the page are internally self-timed, and should take place in a maximum time of tEP. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. 5.3 Buffer to Main Memory Page Program without Built-in Erase A previously-erased page within main memory can be programmed with the contents of either buffer 1 or buffer 2. A one-byte opcode, 88H for buffer 1 or 89H for buffer 2, must be clocked into the device. For the standard DataFlash page size (528 bytes), the opcode must be followed by three address bytes that consist of 1 don't care bit, 13 page address bits (PA12 - PA0) that specify the page in the main memory to be written, and 10 don't care bits. To perform a buffer to main memory page program without built-in erase for the binary page size (512 bytes), the 88H opcode for buffer 1 or 89H opcode for buffer 2 must be clocked into the device, followed by three address bytes consisting of 2 don't care bits, 13 page address bits (A21 - A9) that specify the page in the main memory to be written, and 9 don't care bits. When a low-to-high transition occurs on the CS pin, the part will program the data stored in the buffer into the specified page in the main memory. It is necessary that the page in main memory being programmed has been previously erased using one of the erase commands (page erase or block erase). The programming of the page is internally self-timed, and should take place in a maximum time of tP. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. 5.4 Page Erase The page erase command can be used to individually erase any page in the main memory array, allowing the buffer to main memory page program to be utilized at a later time. To perform a page erase in the standard DataFlash page size (528 bytes), an opcode of 81H must be loaded into the device, followed by three address bytes comprised of 1 don't care bit, 13 page address bits (PA12 - PA0) that specify the page in the main memory to be erased, and 10 don't care bits. To perform a page erase in the binary page size (512 bytes), the 81H opcode must be loaded into the device, followed by three address bytes consisting of 2 don't care bits, 13 page address bits (A21 - A9) that specify the page in the main memory to be erased, and 9 don't care bits. When a low-to-high transition occurs on the CS pin, the part will erase the selected page (the erased state is a logical 1). The erase operation is internally self-timed, and should take place in a maximum time of tPE. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 7 5.5 Block Erase A block of eight pages can be erased at one time. This command is useful when large amounts of data have to be written into the device. This will avoid using multiple page erase commands. To perform a block erase for the standard DataFlash page size (528-bytes), an opcode of 50H must be loaded into the device, followed by three address bytes comprised of 1 don't care bit, 10 page address bits (PA12-PA3), and 13 don't care bits. The 10 page address bits are used to specify which block of eight pages is to be erased. To perform a block erase for the binary page size (512 bytes), the 50H opcode must be loaded into the device, followed by three address bytes consisting of 2 don't care bits, 10 page address bits (A21 - A12), and 12 don't care bits. The 10 page address bits are used to specify which block of eight pages is to be erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected block of eight pages. The erase operation is internally self-timed, and should take place in a maximum time of tBE. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. Table 5-1. 5.6 Block Erase Addressing PA12/ A21 PA11/ A20 PA10/ A19 PA9/ A18 PA8/ A17 PA7/ A16 PA6/ A15 PA5/ A14 PA4/ A13 PA3/ A12 PA2/ A11 PA1/ A10 PA0/ A9 Block 0 0 0 0 0 0 0 0 0 0 X X X 0 0 0 0 0 0 0 0 0 0 1 X X X 1 0 0 0 0 0 0 0 0 1 0 X X X 2 0 0 0 0 0 0 0 0 1 1 X X X 3 1 1 1 1 1 1 1 1 0 0 X X X 1020 1 1 1 1 1 1 1 1 0 1 X X X 1021 1 1 1 1 1 1 1 1 1 0 X X X 1022 1 1 1 1 1 1 1 1 1 1 X X X 1023 Sector Erase The sector erase command can be used to individually erase any sector in the main memory. There are 64 sectors, and only one sector can be erased at a time. To perform a sector 0a or sector 0b erase for the standard DataFlash page size (528 bytes), an opcode of 7CH must be loaded into the device, followed by three address bytes comprised of 1 don't care bit, 10 page address bits (PA12 - PA3), and 13 don't care bits. To perform a sector 1-63 erase, the 7CH opcode must be loaded into the device, followed by three address bytes comprised of 1 don't care bit, 6 page address bits (PA12 - PA7), and 17 don't care bits. To perform a sector 0a or sector 0b erase for the binary page size (512 bytes), an opcode of 7CH must be loaded into the device, followed by three address bytes comprised of 2 don't care bits, 10 page address bits (A21 - A12), and 12 don't care bits. To perform a sector 1-63 erase, the 7CH opcode must be loaded into the device, followed by three address bytes comprised of 2 don't care bits, 6 page address bits (A21 - A16), and 16 don't care bits. The page address bits are used to specify any valid address location within the sector to be erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected sector. The erase operation is internally self-timed, and should take place in a maximum time of tSE. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 8 Table 5-2. 5.7 Sector Erase Addressing PA12/ A21 PA11/ A20 PA10/ A19 PA9/ A18 PA8/ A17 PA7/ A16 PA6/ A15 PA5/ A14 PA4/ A13 PA3/ A12 PA2/ A11 PA1/ A10 PA0/ A9 Sector 0 0 0 0 0 0 0 0 0 0 X X X 0a 0 0 0 0 0 0 0 0 0 1 X X X 0b 0 0 0 0 0 1 X X X X X X X 1 0 0 0 0 1 0 X X X X X X X 2 1 1 1 1 0 0 X X X X X X X 60 1 1 1 1 0 1 X X X X X X X 61 1 1 1 1 1 0 X X X X X X X 62 1 1 1 1 1 1 X X X X X X X 63 Chip Erase(1) The entire main memory can be erased at one time by using the chip erase command. To execute the chip erase command, a four-byte command sequence, C7H, 94H, 80H, and 9AH, must be clocked into the device. Since the entire memory array is to be erased, no address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored. After the last bit of the opcode sequence has been clocked in, the CS pin can be deasserted to start the erase process. The erase operation is internally self-timed, and should take place in a time of tCE. During this time, the status register will indicate that the device is busy. The chip erase command will not affect sectors that are protected or locked down; the contents of those sectors will remain unchanged. Only those sectors that are not protected or locked down will be erased. Note: 1. Refer to the errata regarding chip erase on page 50. The WP pin can be asserted while the device is erasing, but protection will not be activated until the internal erase cycle completes. Table 5-3. Chip Erase Command Command Byte 1 Byte 2 Byte 3 Byte 4 Chip erase C7H 94H 80H 9AH Figure 5-1. Chip Erase CS Opcode Byte 1 SI Opcode Byte 2 Opcode Byte 3 Opcode Byte 4 Each transition represents 8 bits Note: 1. Refer to the errata regarding chip erase on page 50. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 9 5.8 Main Memory Page Program through Buffer This operation is a combination of the buffer write and buffer to main memory page program with built-in erase operations. Data are first clocked into buffer 1 or buffer 2 from the input pin (SI), and then programmed into a specified page in the main memory. To perform a main memory page program through buffer for the standard DataFlash page size (528 bytes), a one-byte opcode, 82H for buffer 1 or 85H for buffer 2, must first be clocked into the device, followed by three address bytes. The address bytes are comprised of 1 don't care bit, 13 page address bits, (PA12 - PA0) that select the page in the main memory where data is to be written, and 10 buffer address bits (BFA9 - BFA0) that select the first byte in the buffer to be written. To perform a main memory page program through buffer for the binary page size (512 bytes), the 82H opcode for buffer 1 or 85H opcode for buffer 2 must be clocked into the device, followed by three address bytes consisting of 2 don't care bits, 13 page address bits (A21 A9) that specify the page in the main memory to be written, and 9 buffer address bits (BFA8 - BFA0) that select the first byte in the buffer to be written. After all address bytes are clocked in, the part will take data from the input pins and store them in the specified data buffer. If the end of the buffer is reached, the device will wrap around back to the beginning of the buffer. When there is a low-to-high transition on the CS pin, the part will first erase the selected page in main memory to all ones, and then program the data stored in the buffer into that memory page. Both the erase and the programming of the page are internally self-timed, and should take place in a maximum time of tEP. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. 6. Sector Protection Two protection methods, hardware and software controlled, are provided for protection against inadvertent or erroneous program and erase cycles. The software controlled method relies on the use of software commands to enable and disable sector protection, while the hardware controlled method employs the use of the write protect (WP) pin. The selection of which sectors are to be protected or unprotected against program and erase operations is specified in the nonvolatile sector protection register. The status of whether or not sector protection has been enabled or disabled by either the software or the hardware controlled methods can be determined by checking the status register. 6.1 Software Sector Protection 6.1.1 Enable Sector Protection Command Sectors specified for protection in the sector protection register can be protected from program and erase operations by issuing the enable sector protection command. To enable sector protection using the software controlled method, the CS pin must first be asserted, as it would be with any other command. Once the CS pin has been asserted, the appropriate four-byte command sequence must be clocked in via the input pin (SI). After the last bit of the command sequence has been clocked in, the CS pin must be deasserted, after which the sector protection will be enabled. Table 6-1. Enable Sector Protection Command Command Enable Sector Protection Byte 1 Byte 2 Byte 3 Byte 4 3DH 2AH 7FH A9H Figure 6-1. Enable Sector Protection CS SI Opcode Byte 1 Opcode Byte 2 Opcode Byte 3 Opcode Byte 4 Each transition represents 8 bits AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 10 6.1.2 Disable Sector Protection Command To disable sector protection using the software controlled method, the CS pin must first be asserted, as it would be with any other command. Once the CS pin has been asserted, the appropriate four-byte sequence for the disable sector protection command must be clocked in via the input pin (SI). After the last bit of the command sequence has been clocked in, the CS pin must be deasserted, after which the sector protection will be disabled. The WP pin must be in the deasserted state; otherwise, the disable sector protection command will be ignored. Table 6-2. Disenable Sector Protection Command Command Disable sector protection Byte 1 Byte 2 Byte 3 Byte 4 3DH 2AH 7FH 9AH Figure 6-2. Disable Sector Protection CS SI Opcode Byte 1 Opcode Byte 2 Opcode Byte 3 Opcode Byte 4 Each transition represents 8 bits 6.1.3 Various Aspects About Software Controlled Protection Software controlled protection is useful in applications in which the WP pin is not or cannot be controlled by a host processor. In such instances, the WP pin may be left floating (the WP pin is internally pulled high), and sector protection can be controlled using the enable sector protection and disable sector protection commands. If the device is power cycled, then the software controlled protection will be disabled. Once the device is powered up, the enable sector protection command should be reissued if sector protection is desired and if the WP pin is not used. 7. Hardware Controlled Protection Sectors specified in the sector protection register for protection, and the sector protection register itself, can be protected from program and erase operations by asserting the WP pin and keeping the pin in its asserted state. The sector protection register and any sector specified for protection cannot be erased or reprogrammed as long as the WP pin is asserted. In order to modify the sector protection register, the WP pin must be deasserted. If the WP pin is permanently connected to GND, then the content of the sector protection register cannot be changed. If the WP pin is deasserted or permanently connected to VCC, then the content of the sector protection register can be modified. The WP pin will override the software controlled protection method, but only for protecting the sectors. For example, if the sectors were not previously protected by the enable sector protection command, then simply asserting the WP pin would enable sector protection within the maximum specified tWPE time. However, when the WP pin is deasserted, sector protection would no longer be enabled (after the maximum specified tWPD time) as long as the enable sector protection command was not issued while the WP pin was asserted. If the enable sector protection command was issued before or while the WP pin was asserted, then simply deasserting the WP pin would not disable sector protection. In this case, the disable sector protection command would need to be issued while the WP pin is deasserted to disable sector protection. The disable sector protection command is also ignored whenever the WP pin is asserted. A noise filter is incorporated to help protect against spurious noise that may inadvertently assert or deassert the WP pin. The table below details the sector protection status for various scenarios of the WP pin, the enable sector protection command, and the disable sector protection command. Figure 7-1. WP Pin and Protection Status 1 2 3 WP AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 11 Table 7-1. WP Pin and Protection Status Enable Sector Protection Command Disable Sector Protection Command Sector Protection Status Sector Protection Register High Command not issued previously - Issue command X Issue command - Disabled Disabled Enabled Read/write Read/write Read/write 2 Low X X Enabled Read only 3 High Command issued during period 1 or 2 Not issued yet issue command - Enabled Disabled Enabled Read/write Read/write Read/write Time Period WP Pin 1 - Issue command 7.1 Sector Protection Register The nonvolatile sector protection register specifies which sectors are to be protected or unprotected with either the software or hardware controlled protection method. The sector protection register contains 64 bytes of data, in which byte locations 0 through 63 contain values that specify whether sectors 0 through 63 will be protected or unprotected. The sector protection register is user modifiable, and must first be erased before it can be reprogrammed. Table 7-3 illustrates the format of the sector protection register. Table 7-2. Sector Protection Register Sector Number 0 (0a, 0b) Protected 00H Sector 0 (0a, 0b) 0a 0b (Pages 0-7) (Pages 8-127) Bit 7, 6 Bit 5, 4 Bit 3, 2 Bit 1, 0 Data Value Sectors 0a, 0b unprotected 00 00 xx xx 0xH Protect sector 0a (pages 0-7) 11 00 xx xx CxH 00 11 xx xx 3xH 11 11 xx xx FxH Protect sector 0b (pages 8-127) Protect sectors 0a (pages 0-7), 0b (pages 8-127) Note: 7.1.1 FFH See Table 7-3 Unprotected Table 7-3. 1 to 63 1. (1) (R) The default value for bytes 0 through 63 when shipped from Adesto is 00H. x = don't care. Erase Sector Protection Register Command In order to modify and change the value of the sector protection register, it must first be erased using the erase sector protection register command. To erase the sector protection register, the CS pin must first be asserted, as it would be with any other command. Once the CS pin has been asserted, the appropriate four-byte opcode sequence must be clocked into the device via the SI pin. The four-byte opcode sequence must start with 3DH, and be followed by 2AH, 7FH, and CFH. After the last bit of the opcode sequence has been clocked in, the CS pin must be deasserted to initiate the internally self-timed erase cycle. The erasing of the sector protection register should take place in a maximum time of tPE, during which time the status register will indicate that the device is busy. If the device is powered down before the completion of the erase cycle, then the contents of the sector protection register cannot be guaranteed. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 12 The sector protection register can be erased with sector protection enabled or disabled. Since the erased state (FFH) of each byte in the sector protection register is used to indicate that a sector is specified for protection, leaving sector protection enabled during the erasing of the register allows the protection scheme to be more effective in the prevention of accidental programming or erasing of the device. If for some reason an erroneous program or erase command is sent to the device immediately after erasing the sector protection register and before the register can be reprogrammed, then the erroneous program or erase command will not be processed because all sectors will be protected. Table 7-4. Erase Sector Protection Register Command Command Byte 1 Byte 2 Byte 3 Byte 4 3DH 2AH 7FH CFH Erase sector protection register Figure 7-2. Erase Sector Protection Register CS Opcode byte 1 SI Opcode byte 2 Opcode byte 3 Opcode byte 4 Each transition represents 8 bits 7.1.2 Program Sector Protection Register Command Once the sector protection register has been erased, it can be reprogrammed using the program sector protection register command. To program the sector protection register, the CS pin must first be asserted, and then the appropriate four-byte opcode sequence must be clocked into the device via the SI pin. The four-byte opcode sequence must start with 3DH, and be followed by 2AH, 7FH, and FCH. After the last bit of the opcode sequence has been clocked into the device, the data for the contents of the sector protection register must be clocked in. As described in Section 7.1, the sector protection register contains 64 bytes of data, and so 64 bytes must be clocked into the device. The first byte of data corresponds to sector 0, the second byte corresponds to sector 1, and so on, with the last byte of data corresponding to sector 63. After the last data byte has been clocked in, the CS pin must be deasserted to initiate the internally self-timed program cycle. The programming of the sector protection register should take place in a maximum time of tP, during which the status register will indicate that the device is busy. If the device is powered down during the program cycle, the contents of the sector protection register cannot be guaranteed. If the proper number of data bytes is not clocked in before the CS pin is deasserted, then the protection status of the sectors corresponding to the bytes not clocked in can not be guaranteed. For example, if only the first two bytes are clocked in instead of the complete 62 bytes, then the protection status of the last 62 sectors cannot be guaranteed. Furthermore, if more than 64 bytes of data are clocked into the device, then the data will wrap back around to the beginning of the register. For instance, if 65 bytes of data are clocked in, then the 65th byte will be stored at byte location 0 of the sector protection register. If a value other than 00H or FFH is clocked into a byte location of the sector protection register, then the protection status of the sector corresponding to that byte location cannot be guaranteed. For example, if a value of 17H is clocked into byte location 2 of the sector protection register, then the protection status of sector 2 cannot be guaranteed. The sector protection register can be reprogrammed while sector protection is enabled or disabled. Being able to reprogram the sector protection register with sector protection enabled allows the user to temporarily disable the sector protection of an individual sector rather than disabling sector protection completely. The program sector protection register command utilizes the internal SRAM buffer 1 for processing. Therefore, the contents of buffer 1 will be altered from its previous state when this command is issued. Table 7-5. Program Sector Protection Register Command Command Program sector protection register Byte 1 Byte 2 Byte 3 Byte 4 3DH 2AH 7FH FCH AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 13 Figure 7-3. Program Sector Protection Register CS Opcode byte 1 SI Opcode byte 2 Opcode byte 3 Opcode byte 4 Data byte n Data byte n+1 Data byte n + 63 Each transition represents 8 bits 7.1.3 Read Sector Protection Register Command To read the sector protection register, the CS pin must first be asserted. Once the CS pin has been asserted, an opcode of 32H and three dummy bytes must be clocked in via the SI pin. After the last bit of the opcode and dummy bytes has been clocked in, any additional clock pulses on the SCK pins will result in data for the content of the sector protection register being output on the SO pin. The first byte corresponds to sector 0 (0a, 0b), the second byte corresponds to sector 1, and the last byte (byte 64) corresponds to sector 63. Once the last byte of the sector protection register has been clocked out, any additional clock pulses will result in undefined data being output on the SO pin. The CS pin must be deasserted to terminate the read sector protection register operation and put the output into a high-impedance state. Table 7-6. Read Sector Protection Register Command Command Read sector protection register Note: Byte 1 Byte 2 Byte 3 Byte 4 32H xxH xxH xxH xx = Dummy byte Figure 7-4. Read Sector Protection Register CS SI Opcode X X X Data byte n SO Data byte n+1 Data byte n + 63 Each transition represents 8 bits 7.1.4 Various Aspects About the Sector Protection Register The sector protection register is subject to a limit of 10,000 erase/program cycles. Users are encouraged to carefully evaluate the number of times the sector protection register will be modified during the course of the application's life cycle. If the application requires the sector protection register to be modified more than the specified limit of 10,000 cycles because the application needs to temporarily unprotect individual sectors (sector protection remains enabled while the sector protection register is reprogrammed), then the application will need to limit this practice. Instead, a combination of temporarily unprotecting individual sectors, along with disabling sector protection completely, will need to be implemented by the application to ensure that the limit of 10,000 cycles is not exceeded. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 14 8. Security Features 8.1 Sector Lockdown The device incorporates a sector lockdown mechanism that allows each individual sector to be permanently locked so that it becomes read only. This is useful for applications that require the ability to permanently protect a number of sectors against malicious attempts at altering program code or security information. Once a sector is locked down, it can never be erased or programmed, and it can never be unlocked. To issue the sector lockdown command, the CS pin must first be asserted, as it would be for any other command. Once the CS pin has been asserted, the appropriate four-byte opcode sequence must be clocked into the device in the correct order. The four-byte opcode sequence must start with 3DH, and be followed by 2AH, 7FH, and 30H. After the last byte of the command sequence has been clocked in, three address bytes specifying any address within the sector to be locked down must be clocked into the device. After the last address bit has been clocked in, the CS pin must be deasserted to initiate the internally self-timed lockdown sequence. The lockdown sequence should take place in a maximum time of tP, during which the status register will indicate that the device is busy. If the device is powered down before the completion of the lockdown sequence, then the lockdown status of the sector cannot be guaranteed. In this case, it is recommended that the user read the sector lockdown register to determine the status of the appropriate sector lockdown bits or bytes and reissue the sector lockdown command, if necessary. Table 8-1. Sector Lockdown Command Sector lockdown Byte 1 Byte 2 Byte 3 Byte 4 3DH 2AH 7FH 30H Figure 8-1. Sector Lockdown CS Opcode byte 1 SI Opcode byte 2 Opcode byte 3 Opcode byte 4 Address bytes Address bytes Address bytes Each transition represents 8 bits 8.1.1 Sector Lockdown Register The nonvolatile sector lockdown register contains 64 bytes of data, as shown below: Table 8-2. Sector Lockdown Register Sector Number 0 (0a, 0b) Locked FFH See Table 8-3 Unlocked Table 8-3. 1 to 63 00H Sector 0 (0a, 0b) 0a (Pages 0-7) Bit 7, 6 0b (Pages 8-127) Bit 5, 4 Bit 3, 2 Bit 1, 0 Data Value Sectors 0a, 0b unlocked 00 00 00 00 00H Sector 0a locked (pages 0-7) 11 00 00 00 C0H Sector 0b locked (pages 8-127) 00 11 00 00 30H Sectors 0a, 0b locked (pages 0-127) 11 11 00 00 F0H AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 15 8.1.2 Reading the Sector Lockdown Register The sector lockdown register can be read to determine which sectors in the memory array are permanently locked down. To read the sector lockdown register, the CS pin must first be asserted. Once the CS pin has been asserted, an opcode of 35H and three dummy bytes must be clocked into the device via the SI pin. After the last bit of the opcode and dummy bytes has been clocked in, the data for the content of the sector lockdown register will be clocked out on the SO pin. The first byte corresponds to sector 0 (0a, 0b) the second byte corresponds to sector 1, and the last byte (byte 16) corresponds to sector 15. After the last byte of the sector lockdown register has been read, additional pulses on the SCK pin will simply result in undefined data being output on the SO pin. Deasserting the CS pin will terminate the read sector lockdown register operation and put the SO pin into a high-impedance state. Table 8-4 details the values read from the sector lockdown register. Table 8-4. Sector Lockdown Register Command Read sector lockdown register Note: Byte 1 Byte 2 Byte 3 Byte 4 35H xxH xxH xxH xx = Dummy byte. Figure 8-2. Read Sector Lockdown Register CS SI Opcode X X X Data byte n SO Data byte n+1 Data byte n + 63 Each transition represents 8 bits 8.2 Security Register The device contains a specialized security register that can be used for purposes such as unique device serialization or locked key storage. The register is comprised of a total of 128 bytes that are divided into two portions. The first 64 bytes (byte locations 0 through 63) of the security register are allocated as a one-time user programmable space. Once these 64 bytes have been programmed, they cannot be reprogrammed. The remaining 64 bytes of the register (byte locations 64 through 127) are factory programmed by Adesto, and contain a unique value for each device. The factory programmed data are fixed and cannot be changed. Table 8-5. Security Register Security Register Byte Number 0 Data type 1 *** 62 One-time user programmable 63 64 65 *** 126 127 Adesto factory programmed AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 16 8.2.1 Programming the Security Register The user programmable portion of the security register does not need to be erased before it is programmed. To program the security register, the CS pin must first be asserted, and then the appropriate four-byte opcode sequence must be clocked into the device in the correct order. The four-byte opcode sequence must start with 9BH, and be followed by 00H, 00H, and 00H. After the last bit of the opcode sequence has been clocked into the device, the data for the content of the 64-byte user programmable portion of the security register must be clocked in. After the last data byte has been clocked in, the CS pin must be deasserted to initiate the internally self-timed program cycle. The programming of the security register should take place in a maximum time of tP, during which the status register will indicate that the device is busy. If the device is powered down during the program cycle, then the contents of the 64-byte user programmable portion of the security register cannot be guaranteed. If the full 64 bytes of data are not clocked in before the CS pin is deasserted, then the values of the byte locations not clocked in cannot be guaranteed. For example, if only the first two bytes are clocked in instead of the complete 64 bytes, then the remaining 62 bytes of the user programmable portion of the security register cannot be guaranteed. Furthermore, if more than 64 bytes of data are clocked into the device, then the data will wrap back around to the beginning of the register. For instance, if 65 bytes of data are clocked in, then the 65th byte will be stored at byte location 0 of the security register. The user programmable portion of the security register can be programmed only once. Therefore, it is not possible to program only the first two bytes of the register and then program the remaining 62 bytes at a later time. The program security register command utilizes the internal SRAM buffer 1 for processing. Therefore, the contents of buffer 1 will be altered from its previous state when this command is issued. Figure 8-3. Program Security Register CS SI Opcode byte 1 Opcode byte 2 Opcode byte 3 Opcode byte 4 Data byte n Data byte n+1 Data byte n+x Each transition represents 8 bits 8.2.2 Reading the Security Register The security register can be read by first asserting the CS pin and then clocking in an opcode of 77H, followed by three dummy bytes. After the last don't care bit has been clocked in, the content of the security register can be clocked out on the SO pin. After the last byte of the security register has been read, additional pulses on the SCK pin will simply result in undefined data being output on the SO pin. Deasserting the CS pin will terminate the read security register operation and put the SO pin into a high-impedance state. Figure 8-4. Read Security Register CS SI Opcode X X X Data byte n SO Data byte n+1 Data byte n+x Each transition represents 8 bits AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 17 9. Additional Commands 9.1 Main Memory Page to Buffer Transfer A page of data can be transferred from the main memory to either buffer 1 or buffer 2. To start the operation for the standard DataFlash page size (528 bytes), a one-byte opcode, 53H for buffer 1 or 55H for buffer 2, must be clocked into the device, followed by three address bytes comprised of 1 don't care bit, 13 page address bits (PA12 - PA0) that specify the page in main memory that is to be transferred, and 10 don't care bits. To perform a main memory page to buffer transfer for the binary page size (512 bytes), the 53H opcode for buffer 1 or 55H opcode for buffer 2 must be clocked into the device, followed by three address bytes consisting of 2 don't care bits, 13 page address bits (A21 - A9) that specify the page in the main memory that is to be transferred, and 9 don't care bits. The CS pin must be low while toggling the SCK pin to load the opcode and the address bytes from the input pin (SI). The transfer of page of data from the main memory to the buffer will begin when the CS pin transitions from a low to a high state. During the transfer of a page of data (tXFR), the status register can be read or the RDY/BUSY can be monitored to determine whether the transfer has been completed. 9.2 Main Memory Page to Buffer Compare A page of data in the main memory can be compared to the data in buffer 1 or buffer 2. To initiate the operation for a standard DataFlash page size (528 bytes), a one-byte opcode, 60H for buffer 1 or 61H for buffer 2, must be clocked into the device, followed by three address bytes consisting of 1 don't care bit, 13 page address bits (PA12 - PA0) that specify the page in the main memory that is to be compared to the buffer, and 10 don't care bits. To start a main memory page to buffer compare for a binary page size (512 bytes), the 60H opcode for buffer 1 or 61H opcode for buffer 2 must be clocked into the device, followed by three address bytes consisting of 2 don't care bits, 13 page address bits (A21 - A9) that specify the page in the main memory that is to be compared to the buffer, and 9 don't care bits. The CS pin must be low while toggling the SCK pin to load the opcode and the address bytes from the input pin (SI). On the low-to-high transition of the CS pin, the data bytes in the selected main memory page will be compared with the data bytes in buffer 1 or buffer 2. During this time (tCOMP), the status register and the RDY/BUSY pin will indicate that the part is busy. On completion of the compare operation, bit 6 of the status register is updated with the result of the compare. 9.3 Auto Page Rewrite This mode is needed only when multiple bytes within a page or multiple pages of data are modified in a random fashion within a sector. This mode is a combination of two operations: 1. Main memory page to buffer transfer, and 2. Buffer to main memory page program, with built-in erase. A page of data is first transferred from the main memory to buffer 1 or buffer 2, and then the same data (from buffer 1 or buffer 2) are programmed back into their original page of main memory. To start the rewrite operation for the standard DataFlash page size (528 bytes), a one-byte opcode, 58H for buffer 1 or 59H for buffer 2, must be clocked into the device, followed by three address bytes comprised of 1 don't care bit, 13 page address bits (PA12-PA0) that specify the page in main memory to be rewritten, and 10 don't care bits. To initiate an auto page rewrite for a binary page size (512 bytes), the 58H opcode for buffer 1 or 59H opcode for buffer 2 must be clocked into the device, followed by three address bytes consisting of 2 don't care bits, 13 page address bits (A21 - A9) that specify the page in the main memory that is to be written, and 9 don't care bits. When a lowto-high transition occurs on the CS pin, the part will first transfer data from the page in main memory to a buffer and then program the data from the buffer back into same page of main memory. The operation is internally self-timed, and should take place in a maximum time of tEP. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. If a sector is programmed or reprogrammed sequentially page by page, then the programming algorithm shown in Figure 23-1, page 41 is recommended. Otherwise, if multiple bytes in a page or several pages are programmed randomly in a sector, then the programming algorithm shown in Figure 23-2, page 42 is recommended. Each page within a sector must be updated/rewritten at least once within every 20,000 cumulative page erase/program operations in that sector. Please contact Adesto for availability of devices that are specified to exceed the 20,000 cycle cumulative limit. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 18 9.4 Status Register Read The status register can be used to determine the device's ready/busy status, page size, a main memory page to buffer compare operation result, the sector protection status, or the device density. The status register can be read at any time, including during an internally self-timed program or erase operation. To read the status register, the CS pin must be asserted and the opcode of D7H must be loaded into the device. After the opcode is clocked in, the one-byte status register will be clocked out on the output pin (SO), starting with the next clock cycle. The data in the status register, starting with the msb (bit 7), will be clocked out on the SO pin during the next eight clock cycles. After the one byte of the status register has been clocked out, the sequence will repeat itself (as long as CS remains low and SCK is being toggled). The data in the status register is constantly updated, and so each repeating sequence will output new data. Ready/busy status is indicated using bit 7 of the status register. If bit 7 is a one, then the device is not busy and is ready to accept the next command. If bit 7 is a zero, then the device is in a busy state. Since the data in the status register is constantly updated, the user must toggle the SCK pin to check the ready/busy status. There are several operations that can cause the device to be in a busy state: Main memory page to buffer transfer Main memory page to buffer compare Buffer to main memory page program Main memory page program through buffer Page erase, block erase, sector erase, and chip erase Auto page rewrite The result of the most recent main memory page to buffer compare operation is indicated using bit 6 of the status register. If bit 6 is a zero, then the data in the main memory page matches the data in the buffer. If bit 6 is a one, then at least one bit of the data in the main memory page does not match the data in the buffer. Bit 1 of the status register is used to provide information to the user whether sector protection has been enabled or disabled, either by the software-controlled or hardware-controlled method. A logic one indicates that sector protection has been enabled, and logic zero indicates that sector protection has been disabled. Bit 0 o the status register indicates whether the page size of the main memory array is configured for a "power of two" binary page size (512 bytes) or a standard DataFlash page size (528 bytes). If bit 0 is a one, then the page size is set to 512 bytes. If bit 0 is a zero, then the page size is set to 528 bytes. The device density is indicated using bits 5, 4, 3, and 2 of the status register. For the AT45DB321D, the four bits are 1101. The decimal value of these four binary bits does not equate to the device density -- the four bits represent a combinational code relating to differing densities of DataFlash devices. The device density is not the same as the density code indicated in the JEDEC device ID information. The device density is provided only for backward compatibility. Table 9-1. Status Register Format Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 RDY/BUSY COMP 1 1 0 1 Protect Page size AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 19 10. Deep Power-down After an initial power-up, the device will default to standby mode. The deep power-down command allows the device to enter into the lowest power-consumption mode. To enter the deep power-down mode, the CS pin must first be asserted. Once the CS pin has been asserted, an opcode of B9H must be clocked in via the input pin (SI). After the last bit of the command has been clocked in, the CS pin must be deasserted to initiate deep power-down operation. After the CS pin is deasserted, the device will enter the deep power-down mode within a maximum time of tEDPD. Once the device has entered the deep power-down mode, all instructions are ignored, except for the resume from deep power-down commands. Table 10-1. Deep Power-down Command Opcode Deep power-down B9H Figure 10-1. Deep Power-down CS SI Opcode Each transition represents 8 bits 10.1 Resume from Deep Power-down The resume from deep power-down command takes the device out of the deep power-down mode and returns it to the normal standby mode. To resume from deep power-down mode, the CS pin must first be asserted, and an opcode of ABH must be clocked in via the input pin (SI). After the last bit of the command has been clocked in, the CS pin must be deasserted to terminate the deep power-down mode. After the CS pin is deasserted, the device will return to the normal standby mode within a maximum time of tRDPD. The CS pin must remain high during the tRDPD time before the device can receive any commands. After resuming from deep power-down, the device will return to the normal standby mode. Table 10-2. Resume from Deep Power-down Command Opcode Resume from deep power-down ABH Figure 10-2. Resume from Deep Power-Down CS SI Opcode Each transition represents 8 bits AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 20 11. "Power of Two" Binary Page Size Option "Power of two" binary page size configuration register is a user programmable, nonvolatile register that allows the page size of the main memory to be configured for binary page size (512 bytes) or standard DataFlash page size (528 bytes). The power of two page size is a one-time programmable configuration register, and once the device is configured for power of two page size, it cannot be reconfigured again. The devices are initially shipped with the page size set to 528 bytes. The user has the option of ordering binary page size (512-byte) devices from the factory. For details, please refer to Section 24., "Ordering Information" on page 43. For the binary power of two page size to become effective, the following steps must be followed: 1. Program the one-time programmable configuration resister using the opcode sequence: 3DH, 2AH, 80H, and A6H (see Section 11.1). 2. Power cycle the device (i.e., power down and power up again). 3. The page for the binary page size can now be programmed. If the above steps to set the page size prior to page programming are not followed, incorrect data during a read operation may be encountered. 11.1 Programming the Configuration Register To program the configuration register for power of two binary page size, the CS pin must first be asserted, as it would be with any other command. Once the CS pin has been asserted, the appropriate four-byte opcode sequence must be clocked into the device in the correct order. The four-byte opcode sequence must start with 3DH, followed by 2AH, 80H, and A6H. After the last bit of the opcode sequence has been clocked in, the CS pin must be deasserted to initiate the internally self-timed program cycle. The programming of the configuration register should take place in a maximum time of tP, during which time the status register will indicate that the device is busy. The device must be power cycled after the completion of the program cycle to set the power of two page size. If the device is powered-down before the completion of the program cycle, then setting the configuration register cannot be guaranteed. However, the user should check bit 0 of the status register to see whether the page size was configured for binary page size or not. If not, the command can be issued again. Table 11-1. Programming the Configuration Register Command Power of two page size Byte 1 Byte 2 Byte 3 Byte 4 3DH 2AH 80H A6H Figure 11-1. Erase Sector Protection Register CS SI Opcode byte 1 Opcode byte 2 Opcode byte 3 Opcode byte 4 Each transition represents 8 bits 12. Manufacturer and Device ID Read Identification information can be read from the device to enable systems to electronically query and identify the device while it is in the system. The identification method and the command opcode comply with the JEDEC standard for "Manufacturer and Device ID Read Methodology for SPI Compatible Serial Interface Memory Devices." The type of information that can be read from the device includes the JEDEC-defined manufacturer ID, the vendor-specific device ID, and the vendor-specific extended device information. To read the identification information, the CS pin must first be asserted, and then the opcode of 9FH must be clocked into the device. After the opcode has been clocked in, the device will begin outputting the identification data on the SO pin during the subsequent clock cycles. The first byte to be output will be the manufacturer ID, followed by two bytes of device ID information. The fourth byte output will be the extended device information string length, which will be 00H to indicate that no extended AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 21 device information follows. As indicated in the JEDEC standard, reading the extended device information string length and any subsequent data is optional. Deasserting the CS pin will terminate the manufacturer and device ID read operation and put the SO pin into a high-impedance state. The CS pin can be deasserted at any time, and does not require that a full byte of data be read. 12.1 Manufacturer and Device ID Information 12.1.1 Byte 1 - Manufacturer ID JEDEC Assigned Code Hex Value Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 1FH 0 0 0 1 1 1 1 1 Manufacturer ID 1FH = Adesto 12.1.2 Byte 2 - Device ID (Part 1) Family Code Density Code Hex Value Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Family code 27H 0 0 1 0 0 1 1 1 Density code 001 = DataFlash 00111 = 32Mb 12.1.3 Byte 3 - Device ID (Part 2) MLC Code Product Version Code Hex Value Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 01H 0 0 0 0 0 0 0 1 MLC code 000 = 1-bit/cell technology Product version 00001 = Second version Byte count 00H = 0 bytes of Information 12.1.4 Byte 4 - Extended Device Information String Length Byte Count Hex Value Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 00H 0 0 0 0 0 0 0 0 CS SI 9FH Opcode SO Each transition represents 8 bits Note: 1FH 27H 01H 00H Data Data Manufacturer ID Byte 1 Device ID Byte 2 Device ID Byte 3 Extended device information string length Extended device information Byte x Extended device information Byte x + 1 This information would only be output if the extended device information string length value was something other than 00H Based on JEDEC publication 106 (JEP106), manufacturer ID data can be comprised of any number of bytes. Some manufacturers may have manufacturer ID codes that are two, three, or even four bytes long, with the first byte(s) in the sequence being 7FH. A system should detect code 7FH as a "continuation code" and continue to read manufacturer ID bytes. The first non-7FH byte would signify the last byte of manufacturer ID data. For Adesto (and some other manufacturers), the manufacturer ID data is comprised of only one byte. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 22 12.2 Operation Mode Summary The commands described previously can be grouped into four different categories to make clearer which commands can be executed at what times. Group A commands consist of: 1. Main memory page read 2. Continuous array read 3. Read sector protection register 4. Read sector lockdown register 5. Read security register Group B commands consist of: 1. Page erase 2. Block erase 3. Sector erase 4. Chip erase 5. Main memory page to buffer 1 (or 2) transfer 6. Main memory page to buffer 1 (or 2) compare 7. Buffer 1 (or 2) to main memory page program, with built-in erase 8. Buffer 1 (or 2) to main memory page program, without built-in erase 9. Main memory page program through buffer 1 (or 2) 10. Auto page rewrite Group C commands consist of: 1. Buffer 1 (or 2) read 2. Buffer 1 (or 2) write 3. Status register read 4. Manufacturer and device ID read Group D commands consist of: 1. Erase sector protection register 2. Program sector protection register 3. Sector lockdown 4. Program security register If a group A command is in progress (not fully completed), then another command from group A, B, C, or D should not be started. However, during the internally self-timed portion of group B commands, any command in group C can be executed. The group B commands using buffer 1 should use group C commands using buffer 2, and vice versa. Finally, during the internally self-timed portion of a group D command, only the status register read command should be executed. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 23 13. Command Tables Table 13-1. Read Commands Command Opcode Main memory page read D2H Continuous array read (legacy command) E8H Continuous array read (low frequency) 03H Continuous array read (high frequency) 0BH Buffer 1 read (low frequency) D1H Buffer 2 read (low frequency) D3H Buffer 1 read D4H Buffer 2 read D6H Table 13-2. Program and Erase Commands Command Opcode Buffer 1 write 84H Buffer 2 write 87H Buffer 1 to main memory page program, with built-in erase 83H Buffer 2 to main memory page program, with built-in erase 86H Buffer 1 to main memory page program, without built-in erase 88H Buffer 2 to main memory page program, without built-in erase 89H Page erase 81H Block erase 50H Sector erase 7CH Chip erase C7H, 94H, 80H, 9AH Main memory page program through buffer 1 82H Main memory page program through buffer 2 85H Table 13-3. Protection and Security Commands Command Opcode Enable sector protection 3DH + 2AH + 7FH + A9H Disable sector protection 3DH + 2AH + 7FH + 9AH Erase sector protection register 3DH + 2AH + 7FH + CFH Program sector protection register 3DH + 2AH + 7FH + FCH Read sector protection register Sector lockdown Read sector lockdown register Program security register Read security register 32H 3DH + 2AH + 7FH + 30H 35H 9BH + 00H + 00H + 00H 77H AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 24 Table 13-4. Additional Commands Command Opcode Main memory page to buffer 1 transfer 53H Main memory page to buffer 2 transfer 55H Main memory page to buffer 1 compare 60H Main memory page to buffer 2 compare 61H Auto page rewrite through buffer 1 58H Auto page rewrite through buffer 2 59H Deep power-down B9H Resume from deep power-down ABH Status register read D7H Manufacturer and device ID read 9FH Table 13-5. Legacy Commands(1) Command Opcode Buffer 1 read 54H Buffer 2 read 56H Main memory page read 52H Continuous array read 68H Status register read 57H Note: 1. These legacy commands are not recommended for new designs. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 25 Table 13-6. Detailed Bit-level Addressing Sequence for Binary Page Size (512 Bytes) Address Byte Address Byte x x A A A A A A A A A A A A A A A A A A A A A A 1 50h 0 1 0 1 0 0 0 0 x x A A A A A A A A A A x x x x x x x x x x N/A 53h 0 1 0 1 0 0 1 1 x x A A A A A A A A A A A A A x x x x x x x x x N/A 55h 0 1 0 1 0 1 0 1 x x A A A A A A A A A A A A A x x x x x x x x x N/A 58h 0 1 0 1 1 0 0 0 x x A A A A A A A A A A A A A x x x x x x x x x N/A 59h 0 1 0 1 1 0 0 1 x x A A A A A A A A A A A A A x x x x x x x x x N/A 60h 0 1 1 0 0 0 0 0 x x A A A A A A A A A A A A A x x x x x x x x x N/A 61h 0 1 1 0 0 0 0 1 x x A A A A A A A A A A A A A x x x x x x x x x N/A 77h 0 1 1 1 0 1 1 1 x x x x x x x x x x x x x x x x x x x N/A 7Ch 0 1 1 1 1 1 0 0 x x A A A A A A x x x x x x x x x x x x x x x x N/A 81h 1 0 0 0 0 0 0 1 x x A A A A A A A A A A A A A x x x x x x x x x N/A 82h 1 0 0 0 0 0 1 0 x x A A A A A A A A A A A A A A A A A A A A A A N/A 83h 1 0 0 0 0 0 1 1 x x A A A A A A A A A A A A A x N/A 84h 1 0 0 0 0 1 0 0 x x x A A A A A A A A A N/A 85h 1 0 0 0 0 1 0 1 x x A A A A A A A A A A A A A A A A A A A A A A N/A 86h 1 0 0 0 0 1 1 0 x x A A A A A A A A A A A A A x N/A 87h 1 0 0 0 0 1 1 1 x x x A A A A A A A A A N/A 88h 1 0 0 0 1 0 0 0 x x A A A A A A A A A A A A A x x x x x x x x x N/A 89h 1 0 0 0 1 0 0 1 x x A A A A A A A A A A A A A x x x x x x x x x N/A 9Fh 1 0 0 1 1 1 1 1 N/A N/A N/A N/A B9h 1 0 1 1 1 0 0 1 N/A N/A N/A N/A ABh 1 0 1 0 1 0 1 1 N/A N/A N/A N/A D1h 1 1 0 1 0 0 0 1 x x D2h 1 1 0 1 0 0 1 0 x x A A A A A A A A A A A A A A A A A A A A A A D3h 1 1 0 1 0 0 1 1 x x x x x x x x x x x x x x x A A A A A A A A A N/A D4h 1 1 0 1 0 1 0 0 x x x x x x x x x x x x x x x A A A A A A A A A 1 D6h 1 1 0 1 0 1 1 0 x x x x x x x x x x x x x x x A A A A A A A A A 1 D7h 1 1 0 1 0 1 1 1 E8h 1 1 1 0 1 0 0 0 Note: x x x x x x x x x x x x N/A x x x x x x x x x x x x x x x x x x x x x x x x x x x x N/A x x x x x x x x x x x x x x x x x x x x A0 1 A1 1 A2 0 A3 1 A4 0 A5 0 A6 0 A7 0 A8 0Bh A9 N/A A10 x A A A A A A A A A A A A A A A A A A A A A A A11 x A12 1 A13 1 A14 0 A15 0 A16 0 A17 0 A18 0 A19 0 Opcode A20 03h Opcode A21 Reserved Address Byte Reserved Page Size = 512-bytes Additional Don't Care Bytes x A A A A A A A A A N/A x A A A A A A A A A A A A A A A A A A A A A A N/A 4 N/A 4 x = Don't care. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 26 Table 13-7. Detailed Bit-level Addressing Sequence for Standard DataFlash Page Size (528 Bytes) BA0 BA1 BA2 BA3 BA4 BA5 BA6 BA7 BA8 Address Byte BA9 PA0 PA1 PA2 PA3 PA4 PA5 PA6 Address Byte PA7 PA8 PA9 PA10 PA11 Opcode PA12 Opcode Address Byte Reserved Page Size = 528-bytes Additional Don't Care Bytes 03h 0 0 0 0 0 0 1 1 x P P P P P P P P P P P P P B B B B B B B B B B N/A 0Bh 0 0 0 0 1 0 1 1 x P P P P P P P P P P P P P B B B B B B B B B B 1 50h 0 1 0 1 0 0 0 0 x P P P P P P P P P P x x x x x x x x x x x N/A 53h 0 1 0 1 0 0 1 1 x P P P P P P P P P P P P P x x x x x x x x x x N/A 55h 0 1 0 1 0 1 0 1 x P P P P P P P P P P P P P x x x x x x x x x x N/A 58h 0 1 0 1 1 0 0 0 x P P P P P P P P P P P P P x x x x x x x x x x N/A 59h 0 1 0 1 1 0 0 1 x P P P P P P P P P P P P P x x x x x x x x x x N/A 60h 0 1 1 0 0 0 0 0 x P P P P P P P P P P P P P x x x x x x x x x x N/A 61h 0 1 1 0 0 0 0 1 x P P P P P P P P P P P P P x x x x x x x x x x N/A 77h 0 1 1 1 0 1 1 1 x x x x x x x x x x x x x x x x x x N/A 7Ch 0 1 1 1 1 1 0 0 x P P P P P P x x x x x x x x x x x x x x x x x N/A 81h 1 0 0 0 0 0 0 1 x P P P P P P P P P P P P P x x x x x x x x x x N/A 82h 1 0 0 0 0 0 1 0 x P P P P P P P P P P P P P B B B B B B B B B B N/A 83h 1 0 0 0 0 0 1 1 x P P P P P P P P P P P P P x x N/A 84h 1 0 0 0 0 1 0 0 x x B B B B B B B B B B N/A 85h 1 0 0 0 0 1 0 1 x P P P P P P P P P P P P P B B B B B B B B B B N/A 86h 1 0 0 0 0 1 1 0 x P P P P P P P P P P P P P x x N/A 87h 1 0 0 0 0 1 1 1 x x B B B B B B B B B B N/A 88h 1 0 0 0 1 0 0 0 x P P P P P P P P P P P P P x x x x x x x x x x N/A 89h 1 0 0 0 1 0 0 1 x P P P P P P P P P P P P P x x x x x x x x x x N/A 9Fh 1 0 0 1 1 1 1 1 N/A N/A N/A N/A B9h 1 0 1 1 1 0 0 1 N/A N/A N/A N/A ABh 1 0 1 0 1 0 1 1 N/A N/A N/A N/A D1h 1 1 0 1 0 0 0 1 x D2h 1 1 0 1 0 0 1 0 x P P P P P P P P P P P P P B B B B B B B B B B D3h 1 1 0 1 0 0 0 1 x x x x x x x x x x x x x x B B B B B B B B B B N/A D4h 1 1 0 1 0 1 0 0 x x x x x x x x x x x x x x B B B B B B B B B B 1 D6h 1 1 0 1 0 1 1 0 x x x x x x x x x x x x x x B B B B B B B B B B 1 D7h 1 1 0 1 0 1 1 1 E8h 1 1 1 0 1 0 0 0 Note: x x x x x x x x x x x x x x x x N/A x x x x x x x x x x x x x x x x x x x x x x x x x x x N/A x x x x x x x x x x x x x x x x x x B B B B B B B B B B N/A x P P P P P P P P P P P P P B B B B B B B B B B N/A 4 N/A 4 P = Page address bit. B = Byte/buffer address bit. x = Don't care. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 27 14. Power-on/Reset State When power is first applied to the device, or when recovering from a reset condition, the device will default to Mode 3. In addition, the output pin (SO) will be in a high-impedance state, and a high-to-low transition on the CS pin will be required to start a valid instruction. The mode (Mode 3 or Mode 0) will be automatically selected on every falling edge of CS by sampling the inactive clock state. 14.1 Initial Power-up/Reset Timing Restrictions At power-up, the device must not be selected until the supply voltage reaches VCC (min.) and a further delay of tVCSL. During power-up, the internal power-on reset circuitry keeps the device in reset mode until VCC rises above the power-on reset threshold value (VPOR). At this time, all operations are disabled and the device does not respond to any commands. After powerup is applied and VCC is at the minimum operating voltage, VCC (min.), the tVCSL delay is required before the device can be selected in order to perform a read operation. Similarly, the tPUW delay is required after VCC rises above the power-on reset threshold value (VPOR) before the device can perform a write (program or erase) operation. After initial power-up, the device will default to standby mode. Table 14-1. Initial Power-up/Reset Timing Restrictions 15. Symbol Parameter tVCSL VCC (min.) to chip select low tPUW Power-up device delay before write allowed VPOR Power-on reset voltage Min Typ Max Unit 70 1.5 s 20 ms 2.5 V System Considerations The RapidS serial interface is controlled by the SCK clock, SI serial input, and CS chip select pins. These signals must rise and fall monotonically and be free from noise. Excessive noise or ringing on these pins can be misinterpreted as multiple edges and cause improper operation of the device. The PC board traces must be kept to a minimum distance or appropriately terminated to ensure proper operation. If necessary, decoupling capacitors can be added on these pins to provide filtering against noise glitches. As system complexity continues to increase, voltage regulation is becoming more important. A key element of any voltage regulation scheme is its current sourcing capability. Like all flash memories, the peak current for a DataFlash device occurs during the programming and erase operation. The regulator needs to supply this peak current requirement. An under-specified regulator can cause current starvation. Besides increasing system noise, current starvation during programming or erase can lead to improper operation and possible data corruption. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 28 16. Electrical Specifications Temperature under bias. . . . . . . . . -55C to +125C *Notice: Storage temperature . . . . . . . . . . . -65C to +150C All input voltages (except VCC but including NC pins) with respect to ground . . . . . . . . . . . -0.6V to +6.25V All output voltages with respect to ground . . . . . . . . -0.6V to VCC + 0.6V Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. The "Absolute Maximum Ratings" are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Voltage Extremes referenced in the "Absolute Maximum Ratings" are intended to accommodate short duration undershoot/overshoot conditions and does not imply or guarantee functional device operation at these levels for any extended period of time. Table 16-1. DC and AC Operating Range Operating temperature (case) VCC power supply AT45DB321D (2.5V Version) AT45DB321D -40C to 85C -40C to 85C 2.5V to 3.6V 2.7V to 3.6V Table 16-2. DC Characteristics Symbol Parameter Condition Min Typ Max Unit IDP Deep power-down current CS, RESET, WP = VIH, all inputs at CMOS levels 15 25 A ISB Standby current CS, RESET, WP = VIH, all inputs at CMOS levels 25 50 A f = 20MHz; IOUT = 0mA; VCC = 3.6V 7 10 mA f = 33MHz; IOUT = 0mA; VCC = 3.6V 8 12 mA f = 50MHz; IOUT = 0mA; VCC = 3.6V 10 14 mA f = 66MHz; IOUT = 0mA; VCC = 3.6V 11 15 mA 12 17 mA ICC1 (1) Active current, read operation ICC2 Active current, program/erase operation VCC = 3.6V ILI Input load current VIN = CMOS levels 1 A ILO Output leakage current VI/O = CMOS levels 1 A VIL Input low voltage VCC x 0.3 V VIH Input high voltage VOL Output low voltage IOL = 1.6mA; VCC = 2.7V VOH Output high voltage IOH = -100A Notes: VCC x 0.7 V 0.4 VCC - 0.2V V V 1. ICC1 during a buffer read is 20mA, maximum, @ 20MHz. 2. All inputs (SI, SCK, CS#, WP#, and RESET#) are guaranteed by design to be 5V tolerant. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 29 Table 16-3. AC Characteristics - RapidS / Serial Interface AT45DB321D (2.5V Version) Symbol Parameter Min Typ AT45DB321D Max Min Typ Max Unit fSCK SCK frequency 50 66 MHz fCAR1 SCK frequency for continuous array read 50 66 MHz fCAR2 SCK frequency for continuous array read (Low frequency) 33 33 MHz tWH SCK high time 6.8 6.8 ns tWL SCK low time 6.8 6.8 ns tSCKR(1) SCK rise time, peak-to-peak (slew rate) 0.1 0.1 V/ns tSCKF(1) SCK fall time, peak-to-peak (slew rate) 0.1 0.1 V/ns tCS Minimum CS high time 50 50 ns tCSS CS setup time 5 5 ns tCSH CS hold time 5 5 ns tCSB CS high to RDY/BUSY low tSU Data in setup time 2 2 ns tH Data in hold time 3 3 ns tHO Output hold time 0 0 ns tDIS Output disable time tV Output valid tWPE 100 27 100 35 35 ns 8 6 ns WP low to protection enabled 1 1 s tWPD WP high to protection disabled 1 1 s tEDPD CS high to deep power-down mode 3 3 s tRDPD CS high to standby mode 35 35 s tXFR Page to buffer transfer time 300 300 s tcomp Page to buffer compare time 300 300 s tEP Page erase and programming time (512-/528-bytes) 17 40 17 40 ms tP Page programming time (512/528 bytes) 3 6 3 6 ms tPE Page erase time (512/528 bytes) 15 35 15 35 ms tBE Block erase time (4,096/4,224 bytes) 45 100 45 100 ms tSE Sector erase time (131,072/135,168 bytes) 1.6 5 1.6 5 s tCE Chip erase time TBD TBD TBD TBD s tRST RESET pulse width tREC RESET recovery time 10 27 ns 10 1 s 1 AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 s 30 17. Input Test Waveforms and Measurement Levels AC Driving Levels 2.4V AC Measurement Level 1.5V 0.45V tR, tF < 2ns (10% to 90%) 18. Output Test Load Device under test 30pF 19. AC Waveforms Six different timing waveforms are shown on page 31. Waveform 1 shows the SCK signal being low when CS makes a high-tolow transition, and waveform 2 shows the SCK signal being high when CS makes a high-to-low transition. In both cases, output SO becomes valid while the SCK signal is still low (SCK low time is specified as tWL). Timing waveforms 1 and 2 conform to RapidS serial interface, but for frequencies up to 66MHz. Waveforms 1 and 2 are compatible with SPI Mode 0 and SPI Mode 3, respectively. Waveform 3 and waveform 4 illustrate general timing diagram for RapidS serial interface. These are similar to waveform 1 and waveform 2, except that output SO is not restricted to become valid during the tWL period. These timing waveforms are valid over the full frequency range (maximum frequency = 66MHz) of the RapidS serial case. Table 19-1. Waveform 1 - SPI Mode 0 Compatible (for frequencies up to 66MHz) tCS CS tWH tCSS tWL tCSH SCK tHO tV SO High impedance tSU SI Valid out tDIS High impedance tH Valid in AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 31 Table 19-2. Waveform 2 - SPI Mode 3 Compatible (for frequencies up to 66MHz) tCS CS tCSS tWL tWH tCSH SCK tV SO tHO High Z tDIS High impedance Valid out tSU tH Valid in SI Table 19-3. Waveform 3 - RapidS Mode 0 (FMAX = 66MHz) tCS CS tWH tCSS tWL tCSH SCK tHO tV SO High impedance Valid out tSU SI tDIS High impedance tH Valid in Table 19-4. Waveform 4 - RapidS Mode 3 (FMAX = 66MHz) tCS CS tCSS tWL tWH tCSH SCK tV SO tHO High Z Valid out tSU SI tDIS High impedance tH Valid in AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 32 19.1 Utilizing the RapidS Function To take advantage of the RapidS function's ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus. The DataFlash device is designed to always clock its data out on the falling edge of the SCK signal and clock data in on the rising edge of SCK. For full clock cycle operation to be achieved when the DataFlash device is clocking data out on the falling edge of SCK, the host controller should wait until the next falling edge of SCK to latch the data in. Similarly, the host controller should clock its data out on the rising edge of SCK in order to give the DataFlash device a full clock cycle to latch the incoming data in on the next rising edge of SCK. Figure 19-1. RapidS Mode Slave CS 1 8 2 3 4 5 6 1 8 7 2 3 4 5 6 1 7 SCK B A MOSI E C D MSB LSB BYTE-MOSI H G I F MISO MSB LSB BYTE-SO MOSI = Master Out, Slave In MISO = Master In, Slave Out The Master is the host controller and the Slave is the DataFlash The Master always clocks data out on the rising edge of SCK and always clocks data in on the falling edge of SCK. The Slave always clocks data out on the falling edge of SCK and always clocks data in on the rising edge of SCK. A. B. C. D. E. F. G. H. I. Master clocks out first bit of BYTE-MOSI on the rising edge of SCK Slave clocks in first bit of BYTE-MOSI on the next rising edge of SCK Master clocks out second bit of BYTE-MOSI on the same rising edge of SCK Last bit of BYTE-MOSI is clocked out from the Master Last bit of BYTE-MOSI is clocked into the slave Slave clocks out first bit of BYTE-SO Master clocks in first bit of BYTE-SO Slave clocks out second bit of BYTE-SO Master clocks in last bit of BYTE-SO Figure 19-2. Reset Timing CS tREC tCSS SCK tRST RESET SO (OUTPUT) High impedance High impedance SI (INPUT) Note: The CS signal should be in the high state before the RESET signal is deasserted. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 33 Figure 19-3. Command Sequence for Read/Write Operations for a 512-Byte Page Size (Except Status Register Read, Manufacturer, and Device ID Read) SI (INPUT) CMD XX MSB 8-bits 8-bits 8-bits XXXXX XXXXXXXXX Don't care bits Page address (A21 - A9) XXXX XXXX LSB Byte/Buffer address (A8 - A0/BFA8 - BFA0) Figure 19-4. Command Sequence for Read/Write Operations for a 528-Byte Page Size (Except Status Register Read, Manufacturer, and Device ID Read) CMD SI (INPUT) 8-bits 8-bits 8-bits X X X XX X X X X X X X X X X X MSB 1 Don't care Page address bit (PA12 - PA0) 20. XXXX XXXX LSB Byte/Buffer address (BA9 - BA0/BFA9 - BFA0) Write Operations The following block diagram and waveforms illustrate the various write sequences available. Figure 20-1. Block Diagram Flash Memory Array Page (512-/528-bytes) Buffer 1 to Main Memory Page Program Buffer 2 to Main Memory Page Program Buffer 1 (512-/528-bytes) Buffer 2 (512-/528-bytes) Buffer 2 WRITE Buffer 1 WRITE I/O Interface SI AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 34 Figure 20-2. Buffer Write Completes writing into selected buffer CS Binary Page Size 15 don't care + BFA8-BFA0 SI (INPUT) CMD X X***X, BFA9-8 BFA7-0 n n+1 Last byte Figure 20-3. Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page) Starts self-timed erase/program operation CS Binary Page Size A21-A9 + 9 don't care bits SI (INPUT) CMD PA12-6 Each transition represents 8 bits 21. PA5-0, XX XXXX XX n = 1st byte read n+1 = 2nd byte read Read Operations The following block diagram and waveforms illustrate the various read sequences available. Figure 21-1. Block Diagram Flash Memory Array Page (512-/528-bytes) Main Memory Page to Buffer 2 Main Memory Page to Buffer 1 Buffer 1 (512-/528-bytes) Buffer 2 (512-/528-bytes) Buffer 1 Read Main Memory Page Read Buffer 2 Read I/O Interface SO AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 35 Figure 21-2. Main Memory Page Read CS Address for Binary Page Size A15-A8 A21-A16 A7-A0 SI (INPUT) CMD PA12-6 PA5-0, BA9-8 BA7-0 X X 4 Dummy bytes SO (OUTPUT) n n+1 Figure 21-3. Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer) Starts reading page data into buffer CS Binary Page Size A21-a9 + 9 Don't care bits SI (INPUT) CMD PA12-6 PA5-0, XX XXXX XXXX SO (OUTPUT) Figure 21-4. Buffer Read CS Binary Page Size 15 Don't care + Bfa8-bfa0 SI (INPUT) CMD X X..X, BFA9-8 BFA7- 0 X No dummy byte (opcodes D1H and D3H) 1 dummy byte (opcodes D4H and D6H) SO (OUTPUT) n n+1 Each transition represents 8 bits AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 36 22. Detailed Bit-level Read Waveform - RapidS Serial Interface Mode 0/Mode 3 Figure 22-1. Continuous Array Read (Legacy Opcode E8H) CS 0 1 2 3 4 5 6 7 8 9 10 11 12 29 30 31 32 33 34 62 63 64 65 66 67 68 69 70 71 72 SCK OPCODE SI 1 1 1 0 1 Address bits 0 0 0 MSB A A A A A A 32 Don't care bits A A A MSB X X X X X X MSB Data byte 1 SO High-impedance D D D D D D D D MSB D D MSB Bit 0 of Page N+1 Bit 4095/4223 of Page N Figure 22-2. Continuous Array Read (Opcode 0BH) CS 0 1 2 3 4 5 6 7 8 9 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 10 11 12 SCK OPCODE SI 0 0 0 0 1 Address bits a21 - a0 0 1 1 MSB A A A A A A Don't care A A A MSB X X X X X X X X MSB Data byte 1 SO High-impedance D D D MSB D D D D D D D MSB Figure 22-3. Continuous Array Read (Low Frequency: Opcode 03H) CS 0 1 2 3 4 5 6 7 8 9 10 11 12 29 30 31 32 33 34 35 36 37 38 39 40 SCK OPCODE SI 0 0 0 0 0 MSB Address bits a21-a0 0 1 1 A A A A A A A A A MSB Data byte 1 SO High-impedance D MSB D D D D D D D D D MSB AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 37 Figure 22-4. Main Memory Page Read (Opcode: D2H) CS 0 1 2 3 4 5 6 7 8 9 10 11 12 29 30 31 32 33 34 62 63 64 65 66 67 68 69 70 71 72 SCK OPCODE SI 1 1 0 1 0 Address bits 0 1 A 0 MSB A A A A A 32 don't care bits A A A MSB X X X X X X MSB Data byte 1 SO High-impedance D D D D D D D D MSB D D MSB Figure 22-5. Buffer Read (Opcode D4H or D6H) CS 0 1 2 3 4 5 6 7 8 9 10 11 12 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SCK Address bits Binary page size = 15 don't care + BFA8-BFA0 Standard dataflash page size = 14 don't care + BFA9-BFA0 OPCODE SI 1 1 0 1 0 1 0 0 MSB X X X X X X A A Don't care A MSB X X X X X X X X MSB Data byte 1 SO High-impedance D D D MSB D D D D D D D MSB Figure 22-6. Buffer Read (Low Frequency: Opcode D1H or D3H) CS 0 1 2 3 4 5 6 7 8 9 10 11 12 29 30 31 32 33 34 35 36 37 38 39 40 SCK Address bits Binary page size = 15 don't care + BFA8-BFA0 Standard Dataflash page size = 14 don't care + BFA9-BFA0 OPCODE SI 1 1 0 1 0 MSB 0 0 1 X X X X X X A A A MSB Data byte 1 SO High-impedance D MSB D D D D D D D D D MSB AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 38 Figure 22-7. Read Sector Protection Register (Opcode 32H) CS 0 1 2 3 4 5 6 7 8 9 10 11 12 29 30 31 32 33 34 35 36 37 38 39 40 SCK OPCODE SI 0 0 1 1 0 Don't care 0 1 0 MSB X X X X X X X X X MSB Data byte 1 SO High-impedance D D D D D D D D MSB D MSB Figure 22-8. Read Sector Lockdown Register (Opcode 35H) CS 0 1 2 3 4 5 6 7 8 9 10 11 12 29 30 31 32 33 34 35 36 37 38 39 40 SCK OPCODE SI 0 0 1 1 0 Don't care 1 0 1 MSB X X X X X X X X X MSB Data byte 1 SO High-impedance D D D D D D D D MSB D MSB Figure 22-9. Read Security Register (Opcode 77H) CS 0 1 2 3 4 5 6 7 8 9 10 11 12 29 30 31 32 33 34 35 36 37 38 39 40 SCK OPCODE SI 0 1 1 1 0 MSB Don't care 1 1 1 X X X X X X X X X MSB Data byte 1 SO High-impedance D MSB D D D D D D D D MSB AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 39 Figure 22-10.Status Register Read (Opcode D7H) CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 SCK OPCODE SI 1 1 0 1 0 1 1 1 MSB Status register data SO High-impedance D D D D D D D Status register data D MSB D D D D D D D MSB D D D MSB Figure 22-11.Manufacturer and Device Read (Opcode 9FH) CS 0 6 7 8 14 15 16 22 23 24 30 31 32 38 SCK OPCODE SI SO 9FH High-impedance Note: Each transition 1FH Device Id byte 1 Device Id byte 2 00H shown for SI and SO represents one byte (8 bits) AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 40 23. Auto Page Rewrite Flowchart Figure 23-1. Algorithm for Programming or Reprogramming of the Entire Array Sequentially START Provide Address and Data Buffer Write (84h, 87h) Main Memory Page Program through Buffer (82h, 85h) Buffer to Main Memory Page Program (83h, 86h) END Notes: 1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page by page. 2. A page can be written using either a main memory page program operation, or a buffer write operation followed by a buffer to main memory page program operation. 3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page within the entire array. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 41 Figure 23-2. Algorithm for Randomly Modifying Data START provide address of page to modify Main Memory Page to Buffer Transfer (53h, 55h) If planning to modify multiple bytes currently stored within a page of the Flash array Buffer Write (84h, 87h) Main Memory Page Program through Buffer (82h, 85h) Buffer to Main Memory Page Program (83h, 86h) Auto Page Rewrite (58h, 59h) (2) Increment Page (2) Address Pointer END Notes: 1. To preserve data integrity, each page of an DataFlash sector must be updated/rewritten at least once within every 20,000 cumulative page erase and program operations. 2. A page address pointer must be maintained to indicate which page is to be rewritten. The auto page rewrite command must use the address specified by the page address pointer. 3. Other algorithms can be used to rewrite portions of the flash array. Low-power applications may choose to wait until 20,000 cumulative page erase and program operations have accumulated before rewriting all pages of the sector. See application note AN-4 ("Using Serial DataFlash") for more details. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 42 24. Ordering Information Ordering Code Detail A T 4 5 D B 3 2 1 D - MW U Designator Product Family Device Grade U = Matte Sn lead finish, industrial temperature range (-40C to +85C) Package Option Device Density M MW S T C 32 = 32-megabit Interface 1 = Serial = = = = = 8-pad, 6 x 5 x 1mm MLF (VDFN) 8-pad, 8 x 6 x 1mm MLF (VDFN) 8-lead, 0.209" wide SOIC 28-lead, TSOP 24 Ball BGA Device Revision Green Package Options (Pb/Halide-free/RoHS Compliant) Ordering Code(1)(2) AT45DB321D-MU AT45DB321D-MU-SL954(3) AT45DB321D-MU-SL955(4) Package Operating Voltage fSCK (MHz) Matte Sn 2.7V to 3.6V 66 Matte Sn 2.7V to 3.6V 66 Matte Sn 2.5V to 3.6V 50 Operation Range 8M1-A AT45DB321D-MWU AT45DB321D-MWU-SL954(3) AT45DB321D-MWU-SL955(4) 8MW AT45DB321D-SU AT45DB321D-SU-SL954(3) AT45DB321D-SU-SL955(4) 8S2 AT45DB321D-TU 28T AT45DB321D-CU 24C3 AT45DB321D-MU-2.5 8M1-A AT45DB321D-SU-2.5 8S2 Notes: Lead Finish Industrial (-40C to 85C) 2.7V to 3.6V 1. The shipping carrier option is not marked on the devices. 2. Standard parts are shipped with the page size set to 528 bytes. The user is able to configure these parts to a 512-byte page size, if desired. 3. Parts ordered with suffix SL954 are shipped in bulk, with the page size set to 512 bytes. Parts will have "954" or "SL954" marked on them. 4. Parts ordered with suffix SL955 are shipped in tape and reel, with the page size set to 512 bytes. Parts will have "955" or "SL955" marked on them. Package Type 8M1-A 8-pad, 6 x 5 x 1.0mm, very thin micro lead-frame package MLFTM (VDFN) 8MW 8-pad, 8 x 6 x 1.0mm, very thin micro lead-frame package MLF (VDFN) 8S2 8-lead, 0.209in-wide, plastic gull wing small outline package (EIAJ SOIC) 28T 28-lead, 8mm x 13.4mm, plastic thin small outline package, type I (TSOP) 24C3 24-ball, 6mm x 8mm x 1.4mm ball grid array with a 1mm pitch 5 x 5 ball matrix AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 43 25. Packaging Information 8M1-A - MLF (VDFN) D D1 0 Pin 1 ID E E1 SIDE VIEW TOP VIEW A3 A2 A1 A 0.08 C Pin #1 Notch (0.20 R) e COMMON DIMENSIONS (Unit of Measure = mm) 0.45 D2 E2 SYMBOL MIN NOM MAX A - 0.85 1.00 A1 - - 0.05 A2 0.65 TYP A3 b L K BOTTOM VIEW NOTE 0.20 TYP b 0.35 0.40 0.48 D 5.90 6.00 6.10 D1 5.70 5.75 5.80 D2 3.20 3.40 3.60 E 4.90 5.00 5.10 E1 4.70 4.75 4.80 E2 3.80 4.00 4.20 e 1.27 L 0.50 0.60 0.75 0 - - 12o K 0.25 - - 8/28/08 Package Drawing Contact: contact@adestotech.com TITLE 8M1-A, 8-pad, 6 x 5 x 1.00mm Body, Thermally Enhanced Plastic Very Thin Dual Flat No Lead Package (VDFN) GPC YBR DRAWING NO. 8M1-A AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 REV. D 44 8MW - MLF (VDFN) D Pin 1 ID SIDE VIEW E A1 TOP VIEW A D1 Pin #1 ID COMMON DIMENSIONS (Unit of Measure = mm) 1 Option A Pin #1 Chamfer (C 0.30) E1 SYMBOL MIN NOM MAX A - - 1.00 0.05 A1 e Option B b L K BOTTOM VIEW Pin #1 Notch (0.20 R) - - b 0.35 0.40 0.48 D 7.90 8.00 8.10 D1 6.30 6.40 6.50 E 5.90 6.00 6.10 E1 4.70 4.80 4.90 e L K NOTE 1.27 0.45 0.50 0.55 0.30 REF 5/25/06 DRAWING NO. TITLE Package Drawing Contact: 8MW, 8-pad, 8 x 6 x 1.0mm Body, Very Thin Dual Flat Package 8MW contact@adestotech.com No Lead (MLF) AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 REV. B 45 8S2 - EIAJ SOIC C 1 E E1 L N q TOP VIEW END VIEW e b COMMON DIMENSIONS (Unit of Measure = mm) A SYMBOL A1 D SIDE VIEW MAX NOM A 1.70 2.16 A1 0.05 0.25 NOTE b 0.35 0.48 4 C 0.15 0.35 4 D 5.13 5.35 E1 5.18 5.40 E 7.70 8.26 L 0.51 0.85 q 0 e Notes: 1. 2. 3. 4. MIN 2 8 1.27 BSC 3 This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information. Mismatch of the upper and lower dies and resin burrs aren't included. Determines the true geometric position. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm. Package Drawing Contact: contact@adestotech.com TITLE 8S2, 8-lead, 0.208" Body, Plastic Small Outline Package (EIAJ) GPC STN 4/15/08 DRAWING NO. REV. 8S2 AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 F 46 28T - TSOP, Type 1 PIN 1 0 ~ 5 c Pin 1 Identifier Area D1 D L b e L1 A2 E A GAGE PLANE SEATING PLANE COMMON DIMENSIONS (Unit of Measure = mm) A1 Notes: 1. This package conforms to JEDEC reference MO-183. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.15mm per side and on D1 is 0.25mm per side. 3. Lead coplanarity is 0.10mm maximum. SYMBOL MIN NOM MAX A - - 1.20 A1 0.05 - 0.15 NOTE A2 0.90 1.00 1.05 D 13.20 13.40 13.60 D1 11.70 11.80 11.90 Note 2 E 7.90 8.00 8.10 Note 2 L 0.50 0.60 0.70 L1 0.25 BASIC b 0.17 0.22 0.27 c 0.10 - 0.21 e 0.55 BASIC 12/06/02 TITLE Package Drawing Contact: 28T, 28-lead (8 x 13.4mm) Plastic Thin Small Outline contact@adestotech.com Package, Type I (TSOP) DRAWING NO. REV. 28T C AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 47 24C3 - CBGA E A1 Ball ID D Top View A1 A A1 Ball Corner E1 1.00 REF Side View e 2.00 REF A COMMON DIMENSIONS (Unit of Measure = mm) B C D1 D SYMBOL E E MIN NOM MAX 5.90 6.00 6.10 E1 e 5 4 3 2 Ob Bottom View 1 D NOTE 4.0 TYP 7.90 D1 8.00 8.10 4.0 TYP A - - 1.20 A1 0.25 - - e 1.00 BSC b 0.40 TYP 9/10/04 TITLE Package Drawing Contact: 24C3, 24-ball (5 x 5 Array), 1.0 mm Pitch, 6 x 8 x 1.20 mm, contact@adestotech.com Chip-scale Ball Grid Array Package (CBGA) DRAWING NO. 24C3 AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 REV. A 48 26. Revision History Doc. Rev. Date Comments 3597T 11/2013 Corrected Product ID Hex Value for Byte 3 in Table 12.1.3. Corrected Memory Architecture Diagram, Figure 2-1. 3597S 8/2013 Not recommended for new designs. Use AT45DB321E. 3597R 11/2012 Update to Adesto. 3597Q 06/2011 In Table 16-3, - Increased tXFR, page to buffer transfer time and tCOMP, page to buffer compare time max values from 200us to 300us - Changed tCE typical time and max time are TBD, see errata - Changed tSE typical time is 1.6s and the max time is 5s Replace 24C1 with 24C3 Updated template 3597P 05/2010 Changed tSE (Typ) 1.6 to 0.7 and (Max) 5 to 1.3 Changed from 10,000 to 20,000 cumulative page erase/program operations and added the please contact Adesto statement in section 11.3 3597O 10/2009 Added the 2.5V VCC option Removed AT45DB321D-MWU-2.5 and AT45DB321D-TU-2.5 from the ordering Information table 3597N 04/2009 Updated Absolute Maximum Ratings Added 24C1 24 Ball BGA package Option Deleted DataFlash Card Package Option 3597M 03/2009 Changed deep power-down current values - Increased typical value from 5A to 15A - Increased maximum value from 15A to 25A 3597L 02/2009 Changed tDIS (Typ and Max) to 27ns and 35ns, respectively 3597K 09/2008 Corrected typographical errors in Sector Erase section. Corrected A17+A16 from x (Don't care) to A for opcode 7Ch in Table 15-6 Corrected PA8+PA7 from x (Don't care) to P for opcode 7Ch in Table 15-7 3597J 04/2008 Added part number ordering code details for suffixes SL954/955 Added ordering code details 3597I 08/2007 Added additional text to "power of two" binary page size option Changed tVSCL from 50s to 70s Changed tRDPD from 30s to 35s Changed tXFR and tCOMP values from 400s to 200s Removed AT45DB321D-CNU from ordering information and corresponding 8CN3 package 3597H 02/2007 Added AT45DB321D-CNU to ordering information and corresponding 8CN3 package Removed "not recommended for new designs" comment from 8MW package drawing 3597G 09/2006 Removed "not recommended for new designs" note from ordering information for 8MW package 3597F 08/2006 Added errata regarding Chip Erase Added AT45DB321D-SU to ordering information and corresponding 8S2 package 3597E 07/2006 Corrected typographical errors 3597D 04/2006 Added 8 x 6mm MLF (VDFN) package Changed the sector size of 0a and 0b to 8 pages and 120 pages respectively Changed the Product Version Code to 00001 AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 49 Doc. Rev. Date 3597C 03/2006 Added preliminary Changed the sector size from 256-Kbytes to 64-Kbytes Added the "Legacy Commands" table 3597B 01/2006 Added 6 x 5mm MLF (VDFN) package Added text, in "Programming the Configuration Register", to indicate that power cycling is required to switch to "power of two" page size after the opcode enable has been executed. Corrected typographical error regarding the opcode for chip erase in "Program and Erase Commands" table 3597A 11/2005 Initial release 27. Errata 27.1 Chip Erase Comments 27.1.1 Issue In a certain percentage of units, the chip erase feature may not function correctly and may adversely affect device operation. Therefore, it is recommended that the chip erase commands (opcodes C7H, 94H, 80H, and 9AH) not be used. 27.1.2 Workaround Use block erase (opcode 50H) as an alternative. The block erase function is not affected by the chip erase issue. 27.1.3 Resolution The chip erase feature may be fixed with a new revision of the device. Please contact Adesto for the estimated availability of devices with the fix. AT45DB321D [DATASHEET] 3597T-DFLASH-11/2013 50 Corporate Office California | USA Adesto Headquarters 1250 Borregas Avenue Sunnyvale, CA 94089 Phone: (+1) 408.400.0578 Email: contact@adestotech.com (c) 2013 Adesto Technologies. All rights reserved. / Rev.: 3597T-DFLASH-11/2013 Adesto(R), the Adesto logo, CBRAM(R), and DataFlash(R) are registered trademarks or trademarks of Adesto Technologies. All other marks are the property of their respective owners. Disclaimer: Adesto Technologies Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Adesto's Terms and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Adesto are granted by the Company in connection with the sale of Adesto products, expressly or by implication. Adesto's products are not authorized for use as critical components in life support devices or systems.